产品型号
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GaN-FS-A-U/N/SI-S
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尺寸
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(5.0~10.0)× 10.0 mm2
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(5.0~10.0)× 20.0mm2
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厚度
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350±25μm
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晶面
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(1120)
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斜切角
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-1°±0.2°
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TTV
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≤10μm
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弯曲度
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≤10μm
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导电类型
电阻率(300 K)
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N-type < 0.1Ω·cm
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N-type < 0.05Ω·cm
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Semi-Insulating > 106Ω·cm
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位错密度
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From 1x105 to 3x106cm-2
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有效面积
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>90%
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抛光
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Front Surface:Ra<0.2 nm(polished);
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Back Surface:1-3nm(fine ground);
option:<0.2nm(polished)
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包装
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Packaged in a class 100 clean room environment,
in single container,under a nitrogen atmosphere.
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