名称:高纯 ZrS2 (1g)
晶体种类:
半导体,红外半导体,拓扑材料,热电材料
纯度:
>99.999 %
表征方法:
EDS,SEM,Raman
bandgap:
1 eV
1, Lv, H. Y., et al. "Strain-induced enhancement in the thermoelectric performance of a ZrS 2 monolayer." Journal of Materials Chemistry C 4.20 (2016): 4538-4545.
2,Zhang, Xirui, et al. "Efficient band structure tuning, charge separation, and visible-light response in ZrS 2-based van der Waals heterostructures." Energy & Environmental Science 9.3 (2016): 841-849.
3, Mattinen, Miika, et al. "Atomic layer deposition of emerging 2D semiconductors, HfS2 and ZrS2, for optoelectronics." Chemistry of Materials 31.15 (2019): 5713-5724.
4,Tanthirige, Rukshan M., et al. "Intrinsic Photoconductivity of few-layered ZrS2 Phototransistors via Multiterminal Measurements." Semiconductor Science and Information Devices 1.2 (2020).
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