名称:高纯 TiSe2 (1g)
晶体种类:
半金属,红外材料,超导材料
纯度:
>99.999 %
表征方法:
EDS,SEM,Raman
bandgap:
0 eV
注意事项:
表面容易氧化
参考文献
1,Wang, Hong, et al. "Large‐Area Atomic Layers of the Charge‐Density‐Wave Conductor TiSe2." Advanced Materials 30.8 (2018): 1704382.
2, Hellgren, Maria, et al. "Critical role of the exchange interaction for the electronic structure and charge-density-wave formation in TiSe 2." Physical review letters 119.17 (2017): 176401.
3,Singh, Bahadur, et al. "Stable charge density wave phase in a 1 T–TiSe 2 monolayer." Physical Review B 95.24 (2017): 245136.
4,Campbell, Daniel J., et al. "Intrinsic insulating ground state in transition metal dichalcogenide TiSe 2." Physical Review Materials 3.5 (2019): 053402.





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