Item
|
AlN-T-C-C50
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Dimension
|
§¶ 50.8 ¡À 0.2 mm
|
Thickness/Thickness STD
|
1-5¦Ìm¡À10%/<3%
|
Orientation of AIN
|
C-plane (0001) off angle toward A-axis 0.2¡À0.1¡ã
|
Orientation Flat of AIN
|
£¨1-100£©0¡À0.2¡ã£¬16¡À1mm
|
Conduction Type
|
Semi-Insulating
|
XRD Crystal Quality
|
[1,2)¦Ìm
|
[2,3)¦Ìm
|
[3,4)¦Ìm
|
[4,5)¦Ìm
|
(0002)FWHM(arcsec)
|
¡Ü80
|
¡Ü100
|
¡Ü120
|
¡Ü160
|
(10-12)FWHM(arcsec)
|
¡Ü650
|
¡Ü550
|
¡Ü450
|
¡Ü400
|
Structure
|
~1-5AIN/~20nm AIN buffer/430¡À25¦Ìm sapphire
|
Edge Exclusion
|
¡Ü2.5¦Ìm
|
Through Crack
|
None
|
Orientation of sapphire
|
C plane(0001) off angle toward M-axis 0.2¡À0.1¡ã
|
Orientation Flat of sapphire
|
(11-20)0¡À0.2¡ã£¬16¡À1mm
|
Sapphire Polish
|
Single side polished(SSP)/Double side polished (DSP)
|
Package
|
Packagesd in a cleanroom in containers
|