2-inch GaN thick film wafer (Si doped)
| 【Numbering】BK2020081713 | 【CAS】 | ||
| 【Item No.】 | 【specification】 | ||
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Performance parameters:
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Product number GaN-T-C-N-C50 Size Ф50.8 ± 0.1 mm Thickness 4.5±0.5 μm, 20±2 μm Crystal orientation C-plane(0001) ± 0.5° Conductivity type N-type(Si-doped) Resistivity (300 K) < 0.05Ω·cm Carrier concentration > 1x1018cm-3 Mobility ~ 200cm2/V•s Dislocation density Less than 5x108 cm-2(estimated by FWHMs of XRD) Substrate structure GaN on sapphire (standard :SSP option:DSP) Effective area >90% package Packaged in a class 100 clean room environment, in cassette of 25pcs
or single container , under a nitrogen atmosphere.
| Warm tips: Suzhou Beike nano products are only used for scientific research, not for human body,different batches of products have different specifications and performance |
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