4-inch GaN thick film wafer (Si doped)
| 【Numbering】BK2020081711 | 【CAS】 | ||
| 【Item No.】 | 【specification】 | ||
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Performance parameters:
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Product number GaN-T-C-N-C100 Size Ф 100 ± 0.1 mm Thickness 4.5±0.5 μm, 20±2 μm Crystal orientation C-plane(0001) ± 0.5° Conductivity type N-type(Si-doped) Resistivity (300 K) < 0.05Ω·cm Carrier concentration > 1x1018cm-3 Mobility ~ 200cm2/V•s Dislocation density Less than 5x108 cm-2(estimated by FWHMs of XRD) Substrate structure GaN on sapphire (standard :SSP option:DSP) Effective area >90% package Packaged in a class 100 clean room environment, in cassette of 25pcs
or single container , under a nitrogen atmosphere.
| Warm tips: Suzhou Beike nano products are only used for scientific research, not for human body,different batches of products have different specifications and performance |
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| Warm tips: Suzhou Beike nano products are only used for scientific research, not for human body,different batches of products have different specifications and performance.The website pictures are from the Internet. The pictures are for reference only. Please take the real object as the standard. In case of infringement, please contact us to delete them immediately. |
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