Product number
|
GaN-FS-SP-U/N/SI-S
|
Size
|
£¨5.0~10.0£©¡Á 10.0 mm2
|
£¨5.0~10.0£©¡Á 20.0mm2
|
Thickness
|
350¡À25¦Ìm
|
Planes
|
£¨2021£©
£¨2021£©
£¨1122£©
£¨1011£©
|
Chamfer angle
|
-1¡ã¡À0.2¡ã
|
TTV
|
¡Ü10¦Ìm
|
Curvature
|
¡Ü10¦Ìm
|
Conductivity type
Resistivity£¨300 K£©
|
N-type < 0.1¦¸¡¤cm
|
N-type < 0.05¦¸¡¤cm
|
Semi-Insulating > 106¦¸¡¤cm
|
Dislocation density
|
From 1x105 to 3x106 cm-2
|
Effective area
|
>90%
|
Polished
|
Front Surface£ºRa£¼0.2 nm£¨polished£©
|
Back Surface£º1-3nm£¨fine ground£©;
option£º<0.2nm£¨polished£©.
|
package
|
Packaged in a class 100 clean room environment,
in single container,under a nitrogen atmosphere.
|