Non-polar/semi-polar GaN free-standing substrate (M side)
| 【Numbering】BK2020081708 | 【CAS】 | ||
| 【Item No.】 | 【specification】 | ||
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Performance parameters:
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Product number GaN-FS-M-U/N/SI-S Size （5.0~10.0）× 10.0 mm2 （5.0~10.0）× 20.0mm2 Thickness 350±25μm Planes （1100） Chamfer angle -1°±0.2° TTV ≤10μm Curvature ≤10μm Conductivity type
Resistivity（300 K）N-type < 0.1Ω·cm N-type < 0.05Ω·cm Semi-Insulating > 106Ω·cm Dislocation density From 1x105 to 3x106 cm-2 Effective area >90% Polished Front Surface：Ra＜0.2 nm（polished）
Back Surface：1-3nm(fine ground);
option：<0.2nm(polished).package Packaged in a class 100 clean room environment,
in single container,under a nitrogen atmosphere.
| Warm tips: Suzhou Beike nano products are only used for scientific research, not for human body,different batches of products have different specifications and performance |
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