10×10.5mm2 GaN self-supporting wafer (Fe doped)
| 【Numbering】BK2020081706 | 【CAS】 | ||
| 【Item No.】 | 【specification】 | ||
|
|||
Performance parameters:
-
-
Product number GaN-FS-C-SI-S10 Size 10×10.5mm2 Thickness 350±25μm Crystal orientation C-plane（0001）off angle toward M-Axis 0.35°±0.15° TTV ≤10μm Curvature ≤10μm Conductivity type Semi-Insulating Resistivity (300 K) > 106Ω·cm Dislocation density From 1x105to 3x106cm-2 Effective area >90% Polished Front Surface：Ra＜0.2 nm(polished);
or <0.3nm(polished and surface treatment for epitaxy)Back Surface：0.5~1.5μm;
option：1-3nm(Fine ground)；<0.2nm(polished)package Packaged in a class 100 clean room environment,
in single container,under a nitrogen atmosphere.
| Warm tips: Suzhou Beike nano products are only used for scientific research, not for human body,different batches of products have different specifications and performance |
Message
|
| Warm tips: Suzhou Beike nano products are only used for scientific research, not for human body,different batches of products have different specifications and performance.The website pictures are from the Internet. The pictures are for reference only. Please take the real object as the standard. In case of infringement, please contact us to delete them immediately. |
No video
