10×10.5mm2 GaN self-supporting wafer (Si doped)
| 【Numbering】BK2020081705 | 【CAS】 | ||
| 【Item No.】 | 【specification】 | ||
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Performance parameters:
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Product number GaN-FS-C-N-S10 Size 10×10.5mm2 Thickness 350±25μm Crystal orientation C-plane（0001）off angle toward M-Axis 0.35°±0.15° TTV ≤10μm Curvature ≤10μm Conductivity type N-type Resistivity (300 K) < 0.05Ω·cm Dislocation density From 1x105 to 3x106cm-2 Effective area >90% Polished Front Surface：Ra＜0.2 nm(polished);
or <0.3nm(polished and surface treatment for epitaxy)Back Surface：0.5~1.5μm;
option：1-3nm(Fine ground);<0.2nm(polished)package Packaged in a class 100 clean room environment,
in single container,under a nitrogen atmosphere.
| Warm tips: Suzhou Beike nano products are only used for scientific research, not for human body,different batches of products have different specifications and performance |
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