2-inch GaN self-supporting wafer (Si doped)
| 【Numbering】BK2020081702 | 【CAS】 | ||
| 【Item No.】 | 【specification】 | ||
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Performance parameters:
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2-inch Free-standing U-GaN Substrates |
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Excellent level (S) |
Production level (A) |
Research level (B) |
Dummy level (C) |
Note: |
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S-1 |
S-2 |
A-1 |
A-2 |
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Dimension |
50.8 ± 1 mm |
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Thickness |
350 ± 25 μm |
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Orientation flat |
(1-100) ± 0.5°, 16 ± 1 mm |
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Secondary orientation flat |
(11-20) ± 3°, 8 ± 1 mm |
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Resistivity (300K) |
< 0.05 Ω·cm for N-type (Si-doped; GaN-FS-C-N-C50) |
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TTV |
≤ 15 μm |
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BOW |
≤ 20 μm |
≤ 40 μm |
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Ga face surface roughness |
< 0.2 nm (polished) |
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N face surface roughness |
0.5 ~1.5 μm |
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Package |
Packaged in a cleanroom in single wafer container |
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Useable area |
> 90% |
>80% |
>70% |
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<9.9x105 cm-2 |
<3x106 cm-2 |
<9.9x105 cm-2 |
<3x106 cm-2 |
<3x106cm-2 |
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Orientation：C plane (0001) off angle toward M-axis |
0.35 ± 0.15°(5 points) |
0.35 ± 0.15°(5 points) |
0.35 ± 0.15°(3 points) |
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Macro defect density (hole) |
0 cm2 |
< 0.3 cm -2 |
< 1 cm -2 |
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Max size of macro defects |
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< 700 μm |
< 2000 μm |
< 4000 μm |
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| Warm tips: Suzhou Beike nano products are only used for scientific research, not for human body,different batches of products have different specifications and performance |
Message
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| Warm tips: Suzhou Beike nano products are only used for scientific research, not for human body,different batches of products have different specifications and performance.The website pictures are from the Internet. The pictures are for reference only. Please take the real object as the standard. In case of infringement, please contact us to delete them immediately. |
